The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low R DS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode.

The high integration of the device allows to efficiently drive loads in a tiny space. The PWD13F60 device accepts a supply voltage (V CC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage. The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors. The device is available in a compact VFQFPN package. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs • Low R DS(on) = 320 mΩ • BV DSS = 600 V • Suitable for operating as • Full bridge • Dual independent half bridges • Wide driver supply voltage down to 6.5 V • UVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diode • Outputs in phase with inputs • Very compact and simplified layout • Flexible, easy and fast design Circuit Diagram.

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. Gramota s prikolami kollege pro rabotu park. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage.

The IRS2453(1)D is based on the popular IR2153 self-oscillating half-bridge gate driver IC, and incorporates a high voltage full-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The output driver. The L6205, L6206, L6207 are dual full bridge drivers ICs specifically developed to. L6206 block diagram. Nostale uk. L6207 block diagram.

The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. Both controlling and power signals are available on pin strip for easy connection to customer's board. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.